 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DISCRETE SEMICONDUCTORS DATA SHEET BFS505 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES * Low current consumption * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability * SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones, pagers) up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT GUM F Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 147 C; note 1 IC = 5 mA; VCE = 6 V; Tj = 25 C IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C RBE = 0 CONDITIONS open emitter MIN. - - - - 60 - TYP. - - - - 120 9 17 1.2 1 2 3 PINNING PIN base emitter collector 1 Top view BFS505 DESCRIPTION Code: N0 handbook, 2 columns 3 2 MBC870 Fig.1 SOT323. MAX. 20 15 18 150 250 - - 1.7 UNIT V V mA mW GHz dB dB Ic = 5 mA; VCE = 6 V; f = 900 MHz; - Tamb = 25 C Ic = 1.25 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C - September 1995 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 147 C; note 1 RBE = 0 open collector CONDITIONS open emitter - - - - - -65 - MIN. BFS505 MAX. 20 15 2.5 18 150 150 175 UNIT V V V mA mW C C THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 147 C; note 1 THERMAL RESISTANCE 190 K/W September 1995 3 Philips Semiconductors Product specification NPN 9 GHz wideband transistor CHARACTERISTICS Tj = 25 C, unless otherwise specified. SYMBOL ICBO hFE Ce Cc Cre fT GUM PARAMETER collector cut-off current DC current gain emitter capacitance collector capacitance feedback capacitance transition frequency CONDITIONS IE = 0; VCB = 6 V IC = 5 mA; VCE = 6 V IC = ic = 0; VEB = 0.5 V; f = 1 MHz IE = ie = 0; VCB = 6 V; f = 1 MHz IC = 0; VCB = 0.5 V; f = 1 MHz IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C MIN. - 60 - - - - - - 13 - - - - - TYP. - 120 0.4 0.4 0.3 9 17 10 14 1.2 1.6 1.9 4 10 BFS505 MAX. 50 250 - - - - - - - 1.7 2.1 - - - UNIT nA pF pF pF GHz dB dB dB dB dB dB dBm dBm maximum unilateral power gain IC = 5 mA; VCE = 6 V; f = 900 MHz; (note 1) Tamb = 25 C IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C S212 F insertion power gain noise figure IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 1.25 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 1.25 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C PL1 ITO Notes output power at 1 dB gain compression third order intercept point Ic = 5 mA; VCE = 6 V; RL = 50 ; f = 900 MHz; Tamb = 25 C note 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 G UM = 10 log ------------------------------------------------------------- dB. 2 2 1 - S 11 1 - S 22 2. IC = 5 mA; VCE = 6 V; RL = 50 ; f = 900 MHz; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at f(2p-q) = 898 MHz and at f(2p-q) = 904 MHz. 2 September 1995 4 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 MRC020 - 1 MRC019 200 handbook, halfpage P tot (mW) 150 handbook, halfpage 200 h FE 150 100 100 50 50 0 0 50 100 150 Ts ( o C) 200 0 10-3 10-2 10-1 1 10 102 I C (mA) VCE = 6 V; Tj = 25 C. Fig.2 Power derating curve. Fig.3 DC current gain as a function of collector current. MRC011 handbook,0.5 halfpage C re (pF) handbook, halfpage f 12 MRC013 0.4 T (GHz) 10 VCE = 8 V 3V 8 0.3 6 0.2 4 0.1 2 0 0 2 4 6 8 10 VCB (V) 0 10-1 1 10 I C (mA) 102 IC = 0; f = 1 MHz. f = 1 GHz; Tamb = 25 C. Fig.4 Feedback capacitance as a function of collector-base voltage. Fig.5 Transition frequency as a function of collector current. September 1995 5 Philips Semiconductors Product specification NPN 9 GHz wideband transistor In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. BFS505 handbook, halfpage 25 gain (dB) 20 MRC016 handbook, halfpage 20 MRC017 gain (dB) G UM 15 MSG G max 10 G UM 15 MSG 10 5 5 0 0 2 4 6 I C (mA) 8 0 0 2 4 6 I C (mA) 8 VCE = 6 V; f = 900 MHz; Tamb = 25 C. VCE = 6 V; f = 2 GHz; Tamb = 25 C. Fig.6 Gain as a function of collector current. Fig.7 Gain as a function of collector current. MRC015 handbook, 50 halfpage handbook, halfpage 50 MRC014 gain (dB) 40 G UM gain (dB) 40 G UM 30 30 MSG 20 MSG 20 G max 10 G max 10 0 10-2 10-1 1 f (GHz) 10 0 10-2 10-1 1 f (GHz) 10 IC = 1.25 mA; VCE = 6 V; Tamb = 25 C. IC = 5 mA; VCE = 6 V; Tamb = 25 C. Fig.8 Gain as a function of frequency. Fig.9 Gain as a function of frequency. September 1995 6 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 handbook, halfpage 4 MRC018 handbook, halfpage 4 MRC012 F (dB) 3 F (dB) 3 I C = 5 mA 2 f = 2 GHz 900 MHz 1 500 MHz 1 2 1.25 mA 0 10-1 1 I C (mA) 10 0 10-1 1 f (GHz) 10 VCE = 6 V; Tamb = 25 C. VCE = 6 V; Tamb = 25 C. Fig.10 Minimum noise figure as a function of collector current. Fig.11 Minimum noise figure as a function of frequency. September 1995 7 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 handbook, full pagewidth pot. unst. region 90 1.0 1 45 0.8 0.6 135 0.5 2 stability circle 0.2 Fmin = 1. 2 dB 180 0 0.2 0.5 1 2 OPT 5 F = 1.5 dB F = 2 dB 0.2 F = 3 dB 5 0 5 0.4 0.2 0 -135 0.5 1 2 -45 MRC073 1.0 -90 IC = 1.25 mA; VCE = 6 V; f = 900 MHz; Zo = 50 . Fig.12 Noise circle. handbook, full pagewidth 90 1.0 1 135 0.5 F = 4 dB F = 3 dB F = 2.5 dB Fmin = 1.9 dB OPT 0.2 0.5 1 2 5 5 2 45 0.8 0.6 0.4 0.2 180 0 0 0 0.2 0.2 5 -135 0.5 1 2 -45 MRC074 1.0 -90 IC = 1.25 mA; VCE = 6 V; f = 2 GHz; Zo = 50 . Fig.13 Noise circle. September 1995 8 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 handbook, full pagewidth 90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 3 GHz 1 2 5 40 MHz 0 0 0.2 5 0.2 5 -135 0.5 1 2 -45 MRC056 1.0 -90 IC = 5 mA; VCE = 6 V; Zo = 50 . Fig.14 Common emitter input reflection coefficient (S11). handbook, full pagewidth 90 135 45 40 MHz 3 GHz 180 15 12 9 6 3 0 -135 -45 -90 IC = 5 mA; VCE = 6 V. MRC057 Fig.15 Common emitter forward transmission coefficient (S21). September 1995 9 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 handbook, full pagewidth 90 135 45 3 GHz 180 0.5 40 MHz 0.4 0.3 0.2 0.1 0 -135 -45 -90 IC = 5 mA; VCE = 6 V. MRC058 Fig.16 Common emitter reverse transmission coefficient (S12). handbook, full pagewidth 90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 40 MHz 0 0 0.2 5 0.2 3 GHz 5 -135 0.5 1 2 -45 MRC059 1.0 -90 IC = 5 mA; VCE = 6 V; Zo = 50 . Fig.17 Common emitter output reflection coefficient (S22). September 1995 10 Philips Semiconductors Product specification NPN 9 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads BFS505 SOT323 D B E A X y HE vMA 3 Q A A1 c 1 e1 e bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 September 1995 11 Philips Semiconductors Product specification NPN 9 GHz wideband transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BFS505 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 12 |
Price & Availability of BFS505
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |